SPP2345
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Symbol
Conditions
Min.
Typ
Max. Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
-20
V
-0.35
-0.90
Gate Leakage Current
IGSS
VDS=0V,VGS=±10V
VDS=-16V,VGS=0V
VDS=-16V,VGS=0V
TJ=55℃
±100
-1
nA
uA
Zero Gate Voltage Drain Current
On-State Drain Current
IDSS
-10
VDS≦-5V,VGS=-4.5V
-4
-2
ID(on)
A
VDS≦-5V,VGS=-2.5V
VGS=-4.5V,ID=-3.3A
RDS(on) VGS=-2.5V,ID=-2.8A
VGS=-1.8V,ID=-2.3A
60
72
100
70
85
110
Drain-Source On-Resistance
mΩ
Forward Transconductance
Diode Forward Voltage
gfs
VDS=-5V,ID=-3.5A
IS=-1.5A,VGS=0V
8.5
S
VSD
-0.8
-1.2
8
V
Dynamic
Total Gate Charge
Qg
Qgs
4.8
1.0
1.0
485
85
VDS=-6V,VGS=-4.5V
ID≡-2.8A
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
nC
pF
Qgd
Ciss
Coss
Crss
td(on)
VDS=-6V,VGS=0V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
40
10
16
23
25
20
Turn-On Time
Turn-Off Time
VDD=-6V,RL=6Ω
ID≡-1.0A,VGEN=-4.5V
RG=6Ω
tr
td(off)
tf
13
18
15
ns
2013/06/05 Ver.1
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
