SPP3413
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP3413 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
FEATURES
-20V/-3.4A,R
DS(ON)
= 95mΩ@V
GS
=-4.5V
-20V/-2.4A,R
DS(ON)
=120mΩ@V
GS
=-2.5V
-20V/-1.7A,R
DS(ON)
=145mΩ@V
GS
=-1.8V
-20V/-1.0A,R
DS(ON)
=210mΩ@V
GS
=-1.25V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION(SOT-23-3L)
PART MARKING
2006/04/12
Ver.4
Page 1