SPP3413
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-6V,R
L
=6Ω
I
D
≡-1.0A,V
GEN
=-4.5V
R
G
=6Ω
V
DS
=-6V,V
GS
=0V
f=1MHz
V
DS
=0V,V
GS
=±12V
V
DS
=-20V,V
GS
=0V
V
DS
=-20V,V
GS
=0V
T
J
=55℃
V
DS
≦-5V,V
GS
=-4.5V
V
GS
=-4.5V,I
D
=-3.4A
V
GS
=-2.5V,I
D
=-2.4A
V
GS
=-1.8V,I
D
=-1.7A
V
GS
=-1.25V,I
D
=-1.0A
V
DS
=-5V,I
D
=-2.8A
I
S
=-1.5A,V
GS
=0V
-20
-0.35
-0.8
±100
-1
-5
-6
0.076
0.097
0.123
0.185
6
-0.8
4.8
1.0
1.0
485
85
40
10
13
18
15
16
23
25
20
0.095
0.120
0.145
0.210
-1.2
8
V
nA
uA
A
Ω
S
V
V
DS
=-6V,V
GS
=-4.5V
I
D
≡-2.8A
nC
pF
ns
2006/04/12
Ver.4
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
