SPP3467
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP3467 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
-20V/-5.0A,R
DS(ON)
= 90mΩ@V
GS
=-4.5V
-20V/-3.5A,R
DS(ON)
=110mΩ@V
GS
=-2.5V
-20V/-1.7A,R
DS(ON)
=140mΩ@V
GS
=-1.8V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
TSOP-6P package design
PIN CONFIGURATION(TSOP-6P)
PART MARKING
2007/04/25
Ver.1
Page 1