SPP6308
Dual P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP6308 is the Dual P-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
P-Channel
-20V/1.0A,R
DS(ON)
= 520mΩ@V
GS
=-4.5V
-20V/0.8A,R
DS(ON)
= 700mΩ@V
GS
=-2.5V
-20V/0.7A,R
DS(ON)
= 950mΩ@V
GS
=-1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-363 (SC-70-6L) package design
PIN CONFIGURATION( SOT-363 / SC-70-6L)
PART MARKING
2006/12/12
Ver.1
Page 1
SYNC-POWER [ SYNC POWER CROP. ]
