SPP6507
Dual P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=-10uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
V
DS
=0V,V
GS
=±20V
V
DS
=-24V,V
GS
=0V
V
DS
=-24V,V
GS
=0V
T
J
=55℃
V
DS
= -5V,V
GS
=-4.5V
V
GS
=-10V,I
D
=-2.8A
V
GS
=-4.5V,I
D
=-2.5A
V
GS
=-2.5V,I
D
=-1.5A
V
GS
=-1.8V,I
D
=-1.0A
V
DS
=-10V,I
D
=-2.8A
I
S
=-1.2A,V
GS
=0V
-30
-0.4
-1.0
±100
-1
-10
-4
0.085
0.100
0.135
0.185
4.0
-0.8
0.105
0.115
0.150
0.215
-1.2
V
nA
uA
A
Ω
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=-15V ,V
GS
=-4.5V
I
D
≡-2.0A
5.8
0.8
1.5
380
55
40
6
pF
nC
V
DS
=-15V ,V
GS
=0V
f=1MHz
V
DD
=-15V ,R
L
=15Ω
I
D
≡-1.0A
,V
GEN
=-10V
R
G
=3Ω
3.9
40
15
ns
2006/08/10
Ver.1
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
