SPP8803
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP8803 is the Dual P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
-20V/-7.0A,R
DS(ON)
= 20mΩ@V
GS
=-4.5V
-20V/-6.0 A,R
DS(ON)
= 25mΩ@V
GS
=-2.5V
-20V/-5.0 A,R
DS(ON)
= 35mΩ@V
GS
=-1.8V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
TSSOP-8P package design
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION(TSSOP – 8P)
PART MARKING
2008 / 04 /20
Ver.1
Page 1