SPP9435A
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-15V,R
L
=15Ω
I
D
≡-1.0A,V
GEN
=-10V
R
G
=6Ω
V
DS
=-15V,V
GS
=0V
f=1MHz
V
DS
=0V,V
GS
=±20V
V
DS
=-24V,V
GS
=0V
V
DS
=-24V,V
GS
=0V
T
J
=85℃
V
DS
= -5V,V
GS
=-4.5V
V
GS
=-10V,I
D
=-5.3A
V
GS
=-4.5V,I
D
=-4.2A
V
DS
=-15V,I
D
=-5.7A
I
S
=-2.0A,V
GS
=0V
-30
-1.0
-3.0
±100
-1
-5
-10
0.055
0.090
13
-0.8
27
4
6.5
850
150
85
14
13
56
30
30
45
100
90
0.065
0.100
-1.2
32
V
nA
uA
A
Ω
S
V
V
DS
=-15V,V
GS
=-10V
I
D
= -4.6A
nC
pF
nS
2007/ 06 / 20
Ver.1
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
