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11DQ10 参数 Datasheet PDF下载

11DQ10图片预览
型号: 11DQ10
PDF下载: 下载PDF文件 查看货源
内容描述: 肖特基势垒整流二极管 [SCHOTTKY BARRIER RECTIFIER DIODES]
分类和应用: 整流二极管
文件页数/大小: 2 页 / 33 K
品牌: SYNSEMI [ SYNSEMI, INC. ]
 浏览型号11DQ10的Datasheet PDF文件第2页  
11DQ03 - 11DQ10
PRV : 30 - 100 Volts
I
O
: 1.1 Ampere
FEATURES :
*
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
High efficiency
Low power loss
Low forward voltage drop
Low cost
Pb / RoHS Free
SCHOTTKY BARRIER
RECTIFIER DIODES
DO - 41
0.107 (2.74)
0.080 (2.03)
1.00 (25.4)
MIN.
0.205 (5.20)
0.160 (4.10)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specifie.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
Maximum Peak Forward Surge Current
single half sine wave superimposed on rated load
Maximum Forward Voltage
at I
F
= 1 A, T
J
= 25°C
at I
F
= 2 A, T
J
= 25°C
Maximum Reverse Current at
Rated DC Blocking Voltage
Junction Temperature Range
Storage Temperature Range
T
J
= 25°C
T
J
= 125°C
SYMBOL 11DQ03 11DQ04 11DQ05 11DQ06 11DQ09 11DQ10 UNIT
V
RRM
V
RMS
V
DC
I
F(AV
)
T
C
I
FSM
75
42
0.55
0.71
I
R
I
R(H)
T
J
T
STG
1.0
6.0
30
21
30
40
28
40
50
35
50
1.1
84
26
0.58
0.76
1.0
11
- 40 to + 150
- 40 to + 150
75
42
0.85
0.96
0.5
1.0
mA
°C
°C
60
42
60
90
63
90
100
70
100
V
V
V
A
°C
A
V
F
V
Page 1 of 2
Rev. 04 : October 10, 2005