1N4148
PRV : 100 Volts
Io : 150 mA
FEATURES :
*
*
*
*
*
*
Silicon Epitaxial Planar Diode
High reliability
Low reverse current
Low forward voltage drop
High speed switching
Pb / RoHS Free
HIGH SPEED SWITCHING DIODE
DO - 35
0.079(2.0 )max.
1.00 (25.4)
min.
0.150 (3.8)
max.
0.020 (0.52)max.
1.00 (25.4)
min.
MECHANICAL DATA :
* Case : DO-35 Glass Case
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.13 gram (approximately)
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Average Forward Current
Maximum Surge Forward Current at t < 1s and Tj = 25°C
Maximum Power Dissipation , Ta = 25
°C
Maximum Forward Voltage at I
F
= 10 mA
Maximum Reverse Current
at V
R
= 20V
at V
R
= 75V
at V
R
= 20V, Tj = 150°C
Maximum Voltage Rise when switching ON
test with 50mA Pulses
tp = 0.1µs, Rise Time <30ns fp = 5 to 100kHz
Maximum Reverse Recovery Time
from I
F
= 10mA to I
R
= 1mA , V
R
= 6V , R
L
= 100Ω
Thermal Resistance Junction to Ambient Air
Junction Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
R
I
F(AV)
I
FSM
P
D
V
F
I
R
VALUE
100
75
150
1)
UNIT
V
V
mA
mA
mW
V
nA
µA
µA
V
500
500
1.0
25
5
50
V
fr
2.5
Trr
R
θ
JA
T
J
T
STG
4
350
1)
ns
K/W
°C
°C
175
- 65 to + 175
Note : 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35)
Page 1 of 2
Rev. 03 : March 25, 2005
SYNSEMI [ SYNSEMI, INC. ]
