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1N4150 参数 Datasheet PDF下载

1N4150图片预览
型号: 1N4150
PDF下载: 下载PDF文件 查看货源
内容描述: 高速开关二极管 [HIGH SPEED SWITCHING DIODE]
分类和应用: 二极管开关
文件页数/大小: 2 页 / 24 K
品牌: SYNSEMI [ SYNSEMI, INC. ]
 浏览型号1N4150的Datasheet PDF文件第2页  
1N4150
FEATURES :
• High switching speed: max. 4 ns
• Continuous reverse voltage:max. 50 V
• Repetitive peak reverse voltage:max. 75 V
• Repetitive peak forward current: max. 600 mA
• Pb / RoHS Free
HIGH SPEED SWITCHING DIODE
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
1.00 (25.4)
min.
Cathode
Mark
0.150 (3.8)
max.
MECHANICAL DATA :
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
0.020 (0.52)max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics
(Rating at
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Continuous Forward Current
Maximum Power Dissipation
Maximum Repetitive Peak Forward Current
Maximum Surge Forward Current at t = 1s , Tj = 25°C
Maximum Junction Temperature
Storage Temperature Range
25
°
C ambient temperature unless otherwise specified.)
Symbol
V
RRM
V
RM
I
F
P
D
I
FRM
I
FSM
T
J
T
S
Value
75
50
200
500
600
0.5
200
-65 to + 200
Unit
V
V
mA
mW
mA
A
°C
°C
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Parameter
Reverse Current
Forward Voltage
Diode Capacitance
Symbol
I
R
Test Condition
V
R
= 50 V
V
R
= 50 V , Tj = 150
°C
I
F
= 100 mA
I
F
= 200 mA
f = 1MHz ; V
R
= 0
I
F
= 10 mA to 200 mA
to I
R
= 10 mA to 200 mA;
R
L
= 100
; measured
at I
R
= 0.1x I
F
Min.
-
-
-
-
-
Typ.
-
-
-
-
-
Max.
0.1
100
0.92
1.0
2.5
Unit
µA
µA
V
pF
V
F
Cd
Reverse Recovery Time
Trr
-
-
4
ns
Page 1 of 2
Rev. 02 : March 25, 2005