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HER154 参数 Datasheet PDF下载

HER154图片预览
型号: HER154
PDF下载: 下载PDF文件 查看货源
内容描述: 高产高效整流二极管 [HIGH EFFICIENT RECTIFIER DIODES]
分类和应用: 整流二极管高效整流二极管
文件页数/大小: 2 页 / 34 K
品牌: SYNSEMI [ SYNSEMI, INC. ]
 浏览型号HER154的Datasheet PDF文件第2页  
HER151 - HER158
PRV : 50 - 1000 Volts
Io : 1.5 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
HIGH EFFICIENT
RECTIFIER DIODES
DO - 41
1.00 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55
°C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 1.5 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
HER
151
50
35
50
HER
152
100
70
100
HER
153
200
140
200
HER
154
300
210
300
HER
155
400
280
400
HER
156
600
420
600
HER
157
800
560
800
HER
158
1000
700
1000
UNIT
V
V
V
A
1.5
I
FSM
V
F
I
R
I
R(H)
Trr
60
1.1
5
50
50
50
- 65 to + 150
- 65 to + 150
75
1.7
A
V
µA
µA
ns
pf
°C
°C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
C
J
T
J
T
STG
Notes :
( 1 ) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
DC
Page 1 of 2
Rev. 01 : January 10, 2004