Preliminary Specification
NPN SILICON RF TRANSISTOR
SOT323
TBN6301 series
Unit in mm
2.1±0.1
1.25±0.05
□
Applications
- UHF and VHF wide band amplifier
2.0±0.2
1.30±0.1
1
3
2
0.30±0.1
0.1 Min.
□
Features
- High gain bandwidth product
f
T
= 6 GHz @ V
CE
= 3 V, I
C
= 10 mA
f
T
= 7.5 GHz @ V
CE
= 5 V, I
C
= 20 mA
- High power gain
|S
21
|
2
= 9 dB @ V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
- Low noise figure
NF = 1.4 dB @ V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
0.90±0.1
Pin Configuration
(TBN6301U)
1. Base
2. Emitter
3. Collector
□
Absolute Maximum Ratings
(T
A
= 25
℃)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
P
tot
T
j
T
stg
Ratings
20
8
3
75
150
150
-65 ~ 150
Unit
V
V
V
mA
mW
℃
℃
Caution
:
Electro Static Discharge
sensitive device
http://www.tachyonics.co.kr
Dec. 2005.
0~0.1
Page 1 of 6
Rev. 1.0
0.15±0.05
TACHYONICS [ TACHYONICS CO,. LTD ]
