THN4201 Series
SOT 523
Unit in mm
NPN SiGe RF TRANSISTOR
□
Application
LNA and wide band amplifier up to GHz range
□
Features
o Low Noise Figure
NF = 1.5 dB Typ. @ f = 2 GHz, V
CE
= 3 V, I
C
= 5 mA
NF = 1.7 dB Typ. @ f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
o High Gain
MAG = 10.5 dB Typ. @ f = 2 GHz, V
CE
= 3 V, I
C
= 20 mA
MAG = 8.5 dB Typ. @ f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
o High Transition Frequency
f
T
= 16.5 GHz Typ. @ V
CE
= 3 V, I
C
= 20 mA
Pin Configuration
Pin No
1
2
3
Symbol
B
E
C
Description
Base
Emitter
Collector
Unit : mm
Dimension
2.0ⅹ1.25, 1.0t
2.0ⅹ1.25, 1.0t
1.6ⅹ0.8, 0.8t
1.4ⅹ0.8, 0.6t
□
Available Package
Product
Package
SOT323
SOT343
SOT523
SOT623F
□
h
FE
Classification
Marking
h
FE
AG1
AG2
125 to 300 80 to 160
THN4201U
THN4201Z
THN4201E
THN4201KF
□
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
Ic
P
T
T
STG
T
J
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Ratings
15
6
2.5
35
150
-65 ~ 150
150
Unit
V
V
V
mA
mW
℃
℃
Caution : ESD sensitive device
www.tachyonics.co.kr
- 1/12 -
March-2006
Rev 1.0
TACHYONICS [ TACHYONICS CO,. LTD ]
