THN5601SF
NPN SiGe RF POWER
TRANSISTOR
□
DESCRIPTION
The THN5601SF is a low cost, NPN medium power
SiGe HBT(Hetero-Junction Bipolar Transistor)
encapsulated in a plastic SOT-23F SMD package.
The THN5601SF can be used as a driver device or
an output device, depending on the specific app-
lication.
SOT-23F
□
FEATURES
o 4.8 Volt operation
o P1dB 26dBm @f=900MHz
o Power gain 9.0 dB @f=900MHz
Unit : mm
PIN CONFIGURATION
□
APPLICATIONS
o Hand-help radio equipment in common
emitter class-AB operation in 900MHz
communication band.
PIN NO
1
2
3
SYMBOL
b
e
c
DESCRIPTION
base
emitter
collector
□
MARKING : AM1
□
MAXIMUM RATINGS
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
P
T
T
STG
T
J
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Ts = 60℃
CONDITION
Open Emitter
Open Base
Open Collector
VALUE
20
8
2.5
250
800
-65 ~ 150
150
UNIT
V
V
V
mA
mW
℃
℃
www.tachyonics.co.kr
-1/11-
Sep-2003
Rev 1.1
TACHYONICS [ TACHYONICS CO,. LTD ]
