THN6501 Series
SOT 523
Unit in mm
NPN SiGe RF TRANSISTOR
□
Application
LNA and wide band amplifier up to GHz range
□
Features
o Low Noise Figure
NF = 1.0 dB Typ. @ f = 1 GHz, V
CE
= 3V, I
C
= 7mA
o High Power Gain
MAG = 15 dB Typ. @ f = 1 GHz, V
CE
= 3V, I
C
= 7mA
o High Transition Frequency
f
T
= 9 GHz Typ. @ V
CE
= 3 V, I
C
= 30 mA
Pin Configuration
Pin No
1
2
3
Symbol
B
E
C
Description
Base
Emitter
Collector
Unit : mm
Dimension
2.9ⅹ1.3, 1.2t
2.0ⅹ1.25, 1.0t
2.0ⅹ1.25, 1.0t
1.6ⅹ0.8, 0.8t
□
Available Package
Product
Package
SOT23
SOT323
SOT343
SOT523
□
h
FE
Classification
Marking
h
FE
AB1
AB2
125 to 300 80 to 160
THN6501S
THN6501U
THN6501Z
THN6501E
□
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
STG
T
J
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Ratings
20
12
2.5
100
150
-65 ~ 150
150
Unit
V
V
V
mA
mW
℃
℃
Caution : ESD sensitive device
www.tachyonics.co.kr
- 1/15 -
Aug.-2005
Rev 2.0
TACHYONICS [ TACHYONICS CO,. LTD ]
