THN6501S
NPN Planer RF TRANSISTOR
SOT-23
□
DESCRIPTION
The THN6501S is a low Noise figure and good associated
gain performance at UHF, VHF and Microwave frequencies
It is suitable for a high density surface mount since
transistor has been SOT23 package
□
FEATURES
o Low Noise Figure
N.F = 1.0dB TYP. @ f=1GHz, V
CE
=3V, Ic=7mA
o High Gain
MAG = 14dB TYP. @ f=1GHz, V
CE
=3V, Ic=7mA
o High Transition Frequency
f
T
= 5GHz TYP. @ f=1GHz, V
CE
=3V, Ic=7mA
PIN CONFIGURATION
PIN NO
1
2
3
SYMBOL
B
E
C
DESCRIPTION
Base
Emitter
Collector
Unit : mm
□
MARKING : AB1
□
MAXIMUM RATINGS
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
P
T
T
STG
T
J
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Ts = 60℃
CONDITION
Open Emitter
Open Base
Open Collector
VALUE
25
12
2.5
100
150
-65 ~ 150
150
Unit
V
V
V
mA
mW
℃
℃
www.tachyonics.co.kr
- 1/13 -
Aug-25-2003
TACHYONICS [ TACHYONICS CO,. LTD ]
