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THN6601B 参数 Datasheet PDF下载

THN6601B图片预览
型号: THN6601B
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗RF晶体管 [NPN SiGe RF TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 7 页 / 281 K
品牌: TACHYONICS [ TACHYONICS CO,. LTD ]
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Specification
NPN SiGe RF TRANSISTOR
SOT223
THN6601B
Unit in mm
Applications
- UHF and VHF wide band amplifier
6.5
3.0
4
Features
- High gain bandwidth product
f
T
= 7 GHz
- High power gain
|S
21
|
2
= 7 dB @ V
CE
= 5 V, I
C
= 100 mA, f = 1 GHz
- High power
P
OUT
= 32 dBm (1.5 W) @ V
CE
= 6 V, I
CQ
= 5 mA, f = 465 MHz
1
2.3
0.7
4.6
3.5
7.0
2
3
PIN CONFIGURATION
1. Emitter
2. Base
3. Emitter
4. Collector
Absolute Maximum Ratings
(T
A
= 25
℃)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
P
tot
T
j
T
stg
Ratings
20
12
3
500
1.5
150
-65 ~ 150
Unit
V
V
V
mA
W
http://www.tachyonics.co.kr
July 2005.
Page 1 of 7
Rev. 1.0