Preliminary Specification
NPN SiGe RF POWER TRANSISTOR
SOT223
THN6701B
Unit in mm
□
Applications
- UHF and VHF wide band amplifier
6.5
3.0
4
□
Features
- High power gain
MAG = 15 dB @ V
CE
= 6 V, I
C
= 400 mA, f = 465 MHz
- High power
P
OUT
= 35 dBm(3W) @ V
CE
= 6 V, I
CQ
= 50 mA, f = 465 MHz
1
2.3
0.7
4.6
3.5
7.0
2
3
PIN CONFIGURATION
1. Base
2. Emitter
3. Collector
4. Emitter
□
Absolute Maximum Ratings
(T
A
= 25
℃)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
P
tot
T
j
T
stg
Ratings
17
12
1.5
1
4.5
150
-65 ~ 150
Unit
V
V
V
A
W
℃
℃
http://www.tachyonics.co.kr
Sept. 2005.
Page 1 of 6
Rev. 1.0
TACHYONICS [ TACHYONICS CO,. LTD ]
