Preliminary Specification
Dual N-Channel Dual-Gate MOSFET
□
Description
The TMF3201J is an N-channel enhancement type, dual-insulated
gate, field-effect transistor that utilizes MOS construction.
It is consists of two equal dual gate MOSFET amplifiers with
shared source and gate2 leads. The source and substrate are
interconnected. Internal bias circuits enable DC stabilization and a
very good cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against excessive
input voltage surges. The transistor has a SOT363 micro-
miniature plastic package.
TMF3201J
SOT363
Unit in mm
□
Features
- Two AGC amplifiers in a single package
- Integrated gate protection diodes
- High AGC-range, high gain, low noise figure
□
Applications
1. GATE 1(1)
4. DRAIN (2)
5. SOURCE
6. DRAIN (1)
-Two gain controlled input stage for UHF and VHF tuners
- Professional communications equipment
2. GATE 2
3. GATE 1(2)
□
Absolute Maximum Ratings
(T
a
= 25
℃)
Parameter
Per MOSFET ; unless otherwise specified
Drain-Source Voltage
Drain Current
Gate 1 Current
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
V
DS
I
D
I
G1
P
tot
T
s tg
T
j
10
30
±10
200
-65 ~ 150
150
V
mA
mA
mW
℃
℃
Symbol
Ratings
Unit
Caution
:
Electro Static Discharge
sensitive device, observe handling precaution
http://www.tachyonics.co.kr
January 2005.
Page 1 of 8
Rev. 1.0
TACHYONICS [ TACHYONICS CO,. LTD ]
