Preliminary Specification
N-Channel Dual-Gate MOSFET
□
Description
The TMF3202Z is an enhancement type N-channel field-effect
transistor. The source and substrate are interconnected. Internal
bias circuits enable DC stabilization and a very good cross-
modulation performance during AGC. Integrated diodes between
the gates and source protect against excessive input voltage
surges. The transistor has a SOT343 micro-miniature plastic
package.
TMF3202Z
SOT343
Unit in mm
2
3
1
4
□
Features
- Gain controlled amplifier with AGC
- Integrated gate protection diodes
- High AGC-range, high gain, low noise figure
□
Applications
- Gain controlled input stage for UHF and VHF tuners
- Professional communications equipment
1. SOURCE
2. DRAIN
3. GATE 2
4. GATE 1
□
Absolute Maximum Ratings
(T
a
= 25
℃)
Parameter
Drain-Source Voltage
Drain Current
Gate 1 Current
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Symbol
V
DS
I
D
I
G1
P
tot
T
stg
T
j
Ratings
10
30
±10
200
-65 ~ 150
150
Unit
V
mA
mA
mW
℃
℃
Caution
:
Electro Static Discharge
sensitive device, observe handling precaution
http://www.tachyonics.co.kr
October. 2005.
Page 1 of 8
Rev. 1.0
TACHYONICS [ TACHYONICS CO,. LTD ]
