Small Signal General Purpose Transistors (NPN)
2N4400/2N4401
Electrical Characteristics
(T
Ambient
=25ºC unless noted otherwise)
2N4400
Symbol
Description
Min.
Max.
-
-
-
0.40
0.75
0.95
1.20
100
100
-
-
-
150
-
7.5
8.0
-
6.5
30
250
30
15
20
225
30
Min.
60
40
6.0
-
-
0.75
-
-
-
20
40
80
100
40
1.0
0.1
250
-
-
40
1.0
-
-
-
-
Max.
-
-
-
0.40
0.75
0.95
1.20
100
100
-
-
-
300
-
15
8.0
-
6.5
30
500
30
15
20
225
30
μS
nS
nS
nS
nS
kΩ
x10־
4
2N4401
Unit
Conditions
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100µA, I
C
=0
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
V
EB
=0.4V, V
CE
=35V
V
EB
=0.4V, V
CE
=35V
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=150mA
V
CE
=2V, I
C
=500mA
V
CE
=10V, I
C
=1mA
f=1KHz,
V
CE
=10V, I
C
=1mA
f=1KHz,
V
CE
=10V, I
C
=20mA,
f=100MHz
V
CB
=5V, I
E
=0
f=100KHz,
V
EB
=0.5V, I
C
=0
f=100KHz,
V
CE
=10V, I
C
=1mA
f=1KHz,
V
CE
=10V, I
C
=1mA
f=1KHz,
V
CC
=30V, V
EB
=2V
I
C
=150mA, I
B1
=15mA
V
CC
=30V, I
C
=150mA
I
B1
=I
B2=
15mA
V
(BR)CBO
V
(BR)CEO*
V
(BR)EBO
V
CE(sat) *
V
BE(sat) *
I
CEV
I
BEV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Emitter Saturation Voltage
60
40
6.0
-
-
0.75
-
-
-
-
20
V
V
V
V
Base Emitter Saturation Voltage
Collector Cut–Off Current
Base Cut–Off Current
V
nA
nA
h
FE*
D.C. Current Gain
40
50
20
h
ie
h
re
f
T
C
CBO
C
EBO
h
fe
h
oe
t
d
t
r
t
s
t
f
*
Pulse
Input Impedance
Voltage Feedback Ratio
Current Gain-Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Small Signal Current Gain
Output Admittance
Delay Time
Rise Time
Storage Time
Fall Time
0.5
0.1
200
-
-
20
1.0
-
-
-
-
MHz
pF
pF
Test: Pulse Width<300µs, Duty Cycle<2%
Rev. A/AH 2008-03-05
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