TAK CHEONG
®
SEM ICON DU CTO R
10A SCHOTTKY BARRIER DIODE
Dual High Voltage Schottky Rectifier
Specification Features:
High Voltage Wide Range Selection, 100V, 150V & 200V
High Switching Speed Device
Low Forward Voltage Drop
Low Power Loss and High Efficiency
Guard Ring for Over-voltage Protection
High Surge Capability
RoHS Compliant
Matte Tin(Sn) Lead Finish
Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C Wave Soldering or
per MIL-STD-750, Method 2026.
1. Anode
2. Cathode
3. Anode
1
2
3
TO-220AB
POLARITY CONFIGURATION
DEVICE MARKING DESIGNATION:
Line 1 & 2= Device Name
Line 3 = Datecode
Line 4 = Polarity
MAXIMUM RATINGS
(Per Leg, unless otherwise specified )
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
STG
T
J
Parameter
Maximum Repetitive Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current
Per Leg
Per Package
Non-repetitive Peak Forward Surge Current
8.3mS Single Phase @ Rated Load
Storage Temperature Range
Operating Junction Temperature
TCMBR10100CT
100
TCMBR10150CT
150
TCMBR10200CT
200
Units
V
5
10
80
-65 to +175
+175
A
A
°C
°C
These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTIC
Symbol
Parameter
Maximum Thermal Resistance,
R
θJC
1.5
Junction-to-Case
T
A
= 25°C unless otherwise noted
TCMBR10100CT
Min
---
---
0.900
Max
100
0.850
---
0.950
TCMBR10150CT
Min
---
Max
100
0.900
---
1
TCMBR10200CT
Min
---
Max
100
0.950
V
µA
Units
°C/W
Value
Units
ELECTRICAL CHARACTERISTICS
(Per Leg)
Symbol
I
R
V
F
Note/s:
1.
Parameter
Reverse Current
Forward Voltage
Test Condition
(Note 1)
@ rated V
R
I
F
= 5A
I
F
= 10A
Tested under pulse condition of 300
µ
S.
May 2008 Release, Revision C
Page 1
TCMBR10100CT through TCMBR10200CT
TAK_CHEONG [ Tak Cheong Electronics (Holdings) Co.,Ltd ]
