TAK CHEONG
®
SEM ICON DU CTO R
28A, 60V, 0.023Ω
1
2
GENERAL DESCRIPTION
The N-Channel MOSFET is used an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. This advanced
technology has been especially tailored to minimize on-state
resistance, provide superior switching performance. This
device is well suited for high efficiency switched mode power
suppliers, active power factor correction, electronic lamp
ballasts based half bridge topology.
3
1 = Gate
2 = Drain
3 = Source
TO-220FP
DEVICE MARKING DIAGRAM
L xxxx
TFF
XXXX
L = Tak Cheong Logo
xxyy = Monthly Date Code
TFFXXXX = Device Type
D
FEATURES
●
●
●
Avalanche energy specified
Gate Charge (Typical 36nC)
High Ruggedness.
G
ABSOLUTE MAXIMUM RATINGS
(
T
C
=25°C
, unless otherwise
noted
)
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
EAR
dv/dt
TJ
Tstg
Parameter
Drain- Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation
Derating Factor above 25℃
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction Temperature
Storage Temperature Range
(Note 1)
(Note 2)
(Note 2)
Value
60
±25
28
112
47
0.31
643
4.7
7.0
150
- 55 to +150
S
Units
V
V
A
A
W
W/℃
mJ
mJ
V/ns
℃
℃
Notes:
1. L=300uH, I
AS
=50A, V
DD
=25V, R
G
=50Ω, Starting T
J
=25℃
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. I
SD
≤
50A, di/dt
≤
300A/us, V
DD
≤
BV
DSS
, Starting T
J
=25℃
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
3.22
62.5
Unit
℃/W
℃/W
Number: DB-230
August 2011, Revision A
Page 1
TFF50N06
N-Channel Power MOSFET