TAK CHEONG
®
SEM ICON DU CTO R
8A, 600V, 1.15Ω
GENERAL DESCRIPTION
The N-Channel MOSFET is used an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. This advanced
technology has been especially tailored to minimize on-state
resistance, provide superior switching performance. This
device is well suited for high efficiency switched mode power
suppliers, active power factor correction, electronic lamp
ballasts based half bridge topology.
1
2
3
1 = Gate
2 = Drain
3 = Source
TO-220FP
DEVICE MARKING DIAGRAM
L xxxx
TFF
XXXX
L = Tak Cheong Logo
xxyy = Monthly Date Code
TFFXXXX = Device Type
FEATURES
●
●
●
●
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
D
G
ABSOLUTE MAXIMUM RATINGS
(
T
C
=25°C
, unless otherwise
noted
)
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
EAR
TJ
Tstg
Parameter
Drain- Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation
Derating Factor above 25℃
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Operating Junction Temperature
Storage Temperature Range
(Note 1)
(Note 2)
(Note 2)
Value
600
±30
8.0
32
53
0.43
614
5.3
150
- 55 to +150
S
Units
V
V
A
A
W
W/℃
mJ
mJ
℃
℃
Notes:
1. L=20mH, I
AS
=8.0A, V
DD
=50V, R
G
=50Ω, Starting T
J
=25℃
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
2.35
62.5
Unit
℃/W
℃/W
Number: DB-201
March 2010, Revision B
Page 1
TFF8N60
N-Channel Power MOSFET
TAK_CHEONG [ Tak Cheong Electronics (Holdings) Co.,Ltd ]
