TSLB257, TSLG257, TSLR257
HIGH-SENSITIVITY COLOR
LIGHT-TO-VOLTAGE CONVERTERS
TAOS027C − JUNE 2006
Electrical Characteristics at V
DD
= 5 V, T
A
= 25
°
C, R
L
= 10 k
Ω
(unless otherwise noted) (see Notes
2 and 3)
TSLB257
PARAMETER
V
D
V
OM
Dark voltage
Maximum out ut voltage
output
swing
TEST CONDITIONS
E
e
= 0
V
DD
= 4.5 V, No Load
V
DD
= 4.5 V, R
L
= 10 kΩ
E
e
= 1.7
µW/cm
2
,
λ
p
= 470 nm, Note 4
V
O
Output voltage
E
e
= 1.6
µW/cm
2
,
λ
p
= 524 nm, Note 5
E
e
= 1.1
µW/cm
2
,
λ
p
= 635 nm, Note 6
α
VD
Temperature coefficient
of dark voltage (V
D
)
T
A
= 0°C to 70°C
λ
p
= 470 nm,
see Notes 4 and 7
λ
p
= 524 nm,
see Notes 5 and 7
R
e
Irradiance responsivity
λ
p
=565 nm,
see Notes 7 and 8
λ
p
= 635 nm,
see Notes 6 and 7
λ
p
= 470 nm,
see Notes 4 and 7
λ
p
= 524 nm,
see Notes 5 and 7
R
V
Illuminance responsivity
λ
p
= 565 nm,
see Notes 7 and 8
λ
p
= 635 nm,
see Notes 6 and 7
PSRR
I
DD
Power supply rejection
y j
ratio
Supply current
f
ac
= 100 Hz, see Note 10
f
ac
= 1 kHz, see Note 10
V
O
= 2 V (typical)
−15
1.18
0.53
0.09
0.05
1.57
0.10
0.015
0.033
55
35
1.9
3.5
−15
0.35
1.25
1.17
0.14
0.47
0.24
0.20
0.093
55
35
1.9
3.5
4
1.3
MIN
0
4.49
4.2
2
2.7
1.3
2
2.7
1.3
2
−15
0.09
0.14
0.36
1.82
0.12
0.027
V/Ix
0.06
1.21
55
35
1.9
3.5
dB
mA
V/
(µW/
cm
2
)
2.7
µV/°C
V
4
TYP
MAX
15
MIN
0
4.49
4.2
4
TSLG257
TYP
MAX
15
MIN
0
4.49
4.2
V
TSLR257
TYP
MAX
15
UNIT
mV
NOTES: 2. Measured with R
L
= 10 kΩ between output and ground.
3. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source.
4. The input irradiance is supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength
λ
p
= 470 nm,
spectral halfwidth
∆λ�½
= 35 nm, luminous efficacy = 75 lm/W.
5. The input irradiance is supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength
λ
p
= 524 nm,
spectral halfwidth
∆λ�½
= 47 nm, luminous efficacy = 520 lm/W.
6. The input irradiance is supplied by an AlInGaP light-emitting diode with the following characteristics: peak wavelength
λ
p
= 635 nm,
spectral halfwidth
∆λ�½
= 17 nm, luminous efficacy = 150 lm/W.
7. Responsivity is characterized over the range V
O
= 0.1 V to 4.5 V. The best-fit straight line of Output Voltage V
O
versus Irradiance
E
e
over this range will typically have a positive extrapolated V
O
value for E
e
= 0.
8. The input irradiance is supplied by a GaP light-emitting diode with the following characteristics: peak wavelength
λ
p
= 565 nm,
spectral halfwidth
∆λ�½
= 28 nm, luminous efficacy = 595 lm/W.
9. Illuminance responsivity R
V
is calculated from the irradiance responsivity by using the LED luminous efficacy values stated in Notes
4, 5, 6, and 8, and using 1 lx = 1 lm/m
2
.
10. Power supply rejection ratio PSRR is defined as 20 log (∆V
DD
(f)/∆V
O
(f)) with V
DD
(f = 0) = 5 V and V
O
(f = 0) = 2 V.
The
LUMENOLOGY
r
Company
r
r
www.taosinc.com
Copyright
E
2006, TAOS Inc.
3
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