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US1M 参数 Datasheet PDF下载

US1M图片预览
型号: US1M
PDF下载: 下载PDF文件 查看货源
内容描述: US1M SMA 1A 1000V [US1M SMA 1A 1000V]
分类和应用: 二极管光电二极管
文件页数/大小: 2 页 / 152 K
品牌: TDD [ TDD ]
 浏览型号US1M的Datasheet PDF文件第1页  
RATINGS AND CHARACTERISTIC CURVES (US1A THRU US1M)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
1.2
50
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
TL=90
0
C
8.3ms Single Half Sine Wave
JEDEC Method
AVERAGE FORWARD CURRENT. (A)
1.0
RESISTIVE OR
INDUCTIVE LOAD
40
30
0.5
20
P.C.B. MOUNTED ON 0.2 X 0.2"
(5.0X5.0mm) COPPER PAD AREAS
0
0
20
40
60
80
100
120
o
10
0
140
160
180
1
10
NUMBER OF CYCLES AT 60Hz
100
LEAD TEMPERATURE. ( C)
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
INSTANTANEOUS FORWARD CURRENT. (A)
FIG.4- TYPICAL REVERSE CHARACTERISTICS
100
US1A - US1G
1
INSTANTANEOUS REVERSE CURRENT. (mA)
10
Tj=100
0
C
US1J - US1M
0.1
1
-
-
TDD
-
D A Y A
-
Tj=25
0
C
0.1
0.01
Pulse Width=300 s
1% Duty Cycle
0.001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.01
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
Tj=25
0
C
f=1.0MHz
Vsig=50mVp-p
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE, (
O
C/W)
100
100
100
JUNCTION CAPACITANCE.(pF)
US1
A-U
S1G
10
10
US1J
- US1
M
1
1
0.1
1
10
REVERSE VOLTAGE. (V)
0.1
0.01
0.1
1
T, PULSE DURATION, sec.
10
100
FIG.7- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
Factory Address: Taiguan Industrial zone, Yanjinyu Dongjin Rode No.1, XinXiang, HeNan, China