Sensitive SCRs
Data Sheets
Part Number
Isolated
A
Non-isolated
A
A
G
A
K
I
T
(1)
V
DRM
&
V
RRM
I
GT
(2) (12)
I
DRM
&
I
RRM
(20) (21)
V
TM
(3) (10)
TYPE
K
A
G
K
A
G
K
A
G
TO-220
TO-202
TO-251
V-Pak
TO-252
D-Pak
Amps
I
T(RMS)
MAX
6
6
6
6
6
6
8
8
8
8
8
8
10
10
10
10
10
10
I
T(AV)
MAX
3.8
3.8
3.8
3.8
3.8
3.8
5.1
5.1
5.1
5.1
5.1
5.1
6.4
6.4
6.4
6.4
6.4
6.4
Volts
MIN
200
400
600
200
400
600
200
400
600
200
400
600
200
400
600
200
400
600
µAmps
MAX
200
200
200
500
500
500
200
200
200
500
500
500
200
200
200
500
500
500
µAmps
T
C
=
25 °C
MAX
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
T
C
=
110 °C
MAX
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
Volts
MAX
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
See “Package Dimensions” section for variations. (11)
S2006LS2
S4006LS2
S6006LS2
S2006LS3
S4006LS3
S6006LS3
S2008LS2
S4008LS2
S6008LS2
S2008LS3
S4008LS3
S6008LS3
S2010LS2
S4010LS2
S6010LS2
S2010LS3
S4010LS3
S6010LS3
S2006FS21
S4006FS21
S6006FS21
S2006FS31
S4006FS31
S6006FS31
S2008FS21
S4008FS21
S6008FS21
S2008FS31
S4008FS31
S6008FS31
S2010FS21
S4010FS21
S6010FS21
S2010FS31
S4010FS31
S6010FS31
S2006VS2
S4006VS2
S6006VS2
S2006VS3
S4006VS3
S6006VS3
S2008VS2
S4008VS2
S6008VS2
S2008VS3
S4008VS3
S6008VS3
S2010VS2
S4010VS2
S6010VS2
S2010VS3
S4010VS3
S6010VS3
S2006DS2
S4006DS2
S6006DS2
S2006DS3
S4006DS3
S6006DS3
S2008DS2
S4008DS2
S6008DS2
S2008DS3
S4008DS3
S6008DS3
S2010DS2
S4010DS2
S6010DS2
S2010DS3
S4010DS3
S6010DS3
6A
8A
10 A
Specific Test Conditions
di/dt
— Maximum rate-of-change of on-state current; I
GT
= 50 mA pulse
width
³15
µsec with
£0.1
µs rise time
dv/dt
— Critical rate-of-rise of forward off-state voltage
I
2
t
— RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
I
DRM
and
I
RRM
— Peak off-state current at V
DRM
and V
RRM
I
GT
— DC gate trigger current V
D
= 6 V dc; R
L
= 100
W
I
GM
— Peak gate current
I
H
— DC holding current; initial on-state current = 20 mA
I
T
— Maximum on-state current
I
TSM
— Peak one-cycle forward surge current
P
G(AV)
— Average gate power dissipation
P
GM
— Peak gate power dissipation
t
gt
— Gate controlled turn-on time gate pulse = 10 mA; minimum
width = 15 µS with rise time
£0.1
µs
t
q
— Circuit commutated turn-off time
V
DRM
and
V
RRM
— Repetitive peak off-state forward and reverse voltage
V
GRM
— Peak reverse gate voltage
V
GT
— DC gate trigger voltage; V
D
= 6 V dc; R
L
= 100
W
V
TM
— Peak on-state voltage
General Notes
•
Teccor 2N5064 and 2N6565 Series devices conform to all JEDEC
registered data. See specifications table on pages E5 - 2 and
E5 - 3.
The case lead temperature (
T
C
or T
L
) is measured as shown on
dimensional outline drawings in the “Package Dimensions” section
of this catalog.
All measurements (except I
GT
) are made with an external resistor
R
GK
= 1 kW unless otherwise noted.
All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25 °C unless otherwise specified.
Operating temperature (T
J
) is -65 °C to +110 °C for EC Series
devices, -65 °C to +125 °C for 2N Series devices, -40 °C to
+125 °C for “TCR” Series, and -40 °C to +110 °C for all others.
Storage temperature range (T
S
) is -65 °C to +150 °C for TO-92
devices, -40 °C to +150 °C for TO-202 and Compak devices, and
-40 °C to +125 °C for all others.
Lead solder temperature is a maximum of +230 °C for 10 seconds
maximum
³1/16"
(1.59 mm) from case.
•
•
•
•
•
•
http://www.teccor.com
+1 972-580-7777
E5 - 4
©2002 Teccor Electronics
Thyristor Product Catalog
TECCOR [ TECCOR ELECTRONICS ]
