SCRs
Data Sheets
Part Number
Isolated
A
Non-isolated
A
I
T
(1) (2) (15)
V
DRM
& V
RRM
I
GT
(4)
A
G
TYPE
A
A
A
G
K
K
K
G
A
K
A
G
K
K
A
G
G
A
K
A
G
TO-92
TO-220
TO-202
TO-220
TO-251
V-Pak
Compak
TO-252
D-Pak
Amps
I
T(RMS)
I
T(AV)
MAX
0.64
0.64
0.64
3.8
3.8
3.8
3.8
3.8
5.1
5.1
5.1
5.1
5.1
6.4
6.4
6.4
6.4
6.4
7.6
7.6
7.6
7.6
7.6
Volts
MIN
200
400
600
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
mAmps
MIN
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
MAX
10
10
10
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
20
20
20
20
20
MAX
1
1
1
See “Package Dimensions” section for variations. (11)
1A
S201E
S401E
S601E
S2006L
S2006F1
S4006F1
S6006F1
S2006V
S4006V
S6006V
S8006V
SK006V
S2008F1
S4008F1
S6008F1
S2008R
S4008R
S6008R
S8008R
SK008R
S2010F1
S4010F1
S6010F1
S2010R
S4010R
S6010R
S8010R
SK010R
S2012R
S4012R
S6012R
S8012R
SK012R
S2008V
S4008V
S6008V
S8008V
SK008V
S2010V
S4010V
S6010V
S8010V
SK010V
S2012V
S4012V
S6012V
S8012V
SK012V
S4006L
S6006L
S8006L
SK006L
S2008L
S4008L
S6008L
S8008L
SK008L
S2010L
S2N1
S4N1
S6N1
S2006D
S4006D
S6006D
S8006D
SK006D
S2008D
S4008D
S6008D
S8008D
SK008D
S2010D
S4010D
S6010D
S8010D
SK010D
S2012D
S4012D
S6012D
S8012D
SK012D
6
6
6
6
6
8
8
8
8
8
10
10
10
10
10
12
12
12
12
12
6A
8A
10 A
S4010L
S6010L
S8010L
SK010L
12 A
Specific Test Conditions
di/dt
— Maximum rate-of-rise of on-state current; I
GT
= 150 mA with
£
0.1 µs rise time
dv/dt
— Critical rate of applied forward voltage
I
2
t
— RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
I
DRM
and
I
RRM
— Peak off-state forward and reverse current at V
DRM
and
V
RRM
I
gt
— dc gate trigger current; V
D
= 12 V dc; R
L
= 60
W
for 1 to 16 A
devices and 30
W
for 20 to 70 A devices
I
GM
— Peak gate current
I
H
— dc holding current; gate open
I
T
— Maximum on-state current
I
TSM
— Peak one-cycle forward surge current
P
G(AV)
— Average gate power dissipation
P
GM
— Peak gate power dissipation
t
gt
— Gate controlled turn-on time; gate pulse = 100 mA; minimum
width = 15 µs with rise time
£
0.1 µs
t
q
— Circuit commutated turn-off time
V
DRM
and
V
RRM
— Repetitive peak off-state forward and reverse voltage
V
gt
— DC gate trigger voltage; V
D
= 12 V dc; R
L
= 60
W
for 1 to 16 A
devices and 30
W
for 20 to 70 A devices
V
TM
— Peak on-state voltage at maximum rated RMS current
General Notes
•
•
•
All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25
°C
unless otherwise specified.
Operating temperature range (T
J
) is -65
°C
to +125
°C
for TO-92
devices and -40
°C
to +125
°C
for all other packages.
Storage temperature range (T
S
) is -65
°C
to +150
°C
for TO-92
devices, -40
°C
to +150
°C
for TO-202 and TO-220 devices, and
-40
°C
to +125
°C
for all others.
Lead solder temperature is a maximum of 230
°C
for 10 seconds
maximum;
³1/16"
(1.59 mm) from case.
The case temperature (T
C
) is measured as shown on dimensional
outline drawings in the “Package Dimensions” sectionof this
catalog.
•
•
http://www.teccor.com
+1 972-580-7777
E6 - 2
©2002 Teccor Electronics
Thyristor Product Catalog
TECCOR [ TECCOR ELECTRONICS ]
