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LM385CZB-2.5 参数 Datasheet PDF下载

LM385CZB-2.5图片预览
型号: LM385CZB-2.5
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗,带隙电压参考 [LOW POWER, BANDGAP VOLTAGE REFERENCES]
分类和应用:
文件页数/大小: 4 页 / 57 K
品牌: TELCOM [ TELCOM SEMICONDUCTOR, INC ]
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LM285/285B-1.2V
LM285/285B-2.5V
LM385/385B-1.2V
LM385/385B-2.5V
ABSOLUTE MAXIMUM RATINGS*
Forward Current .................................................... +10mA
Reverse Current .................................................... +30mA
Storage Temperature Range ................ – 65°C to +150°C
Operating Temperature Range
TO-92 Package ................................ – 40°C to +85°C
Surface Mount Package ................... – 40°C to +85°C
LOW POWER, BANDGAP
VOLTAGE REFERENCES
Lead Temperature (Soldering, 10 sec)
TO-92 Package .............................................. +300°C
Surface Mount Package ................................. +300°C
Power Dissipation
Limited by Forward/Reverse Current
*Functional operation above the absolute maximum stress ratings is not
implied.
ELECTRICAL CHARACTERISTICS:
T
A
= +25°C, unless otherwise specified.
Symbol
V
(BR)R
Parameter
Reverse Breakdown Voltage
LM285B-1.2/LM385B-1.2
T
A
= T
low
to T
high
(Note 1)
LM285-1.2V/LM385-1.2V
T
A
= T
low
to T
high
(Note 1)
Minimum Operating Current
T
A
= +25°C
T
A
= T
low
to T
high
(Note 1)
Reverse Breakdown Voltage
Change with Current
I
Rmin
= I
R
= 1.0mA, T
A
= +25°C
T
A
= T
low
to T
high
(Note 1)
1.0mA = I
R
= 20mA, T
A
= +25°C
T
A
= T
low
to T
high
(Note 1)
Reverse Dynamic Impedance
Average Temperature Coefficient
Long Term Stability
Test Conditions
I
R
20mA
LM285 / LM285B–1.2
Min
Typ Max
1.223
1.200
1.205
1.192
1.235
1.235
8.0
1.247
1.270
1.260
1.273
15
20
LM385 / LM385B–1.2
Min
Typ Max
1.223
1.210
1.205
1.192
1.235
1.235
8.0
1.247
1.260
1.260
1.273
Unit
V
I
RMIN
µA
15
20
mV
0.6
30
20
1.0
1.5
10
20
100
0.6
30
20
1.0
1.5
20
25
100
∆V
(BR)R
Z
∆V
(BR)
/∆T
S
I
R
= 100µA
10µA
I
R
20mA
I
R
= 100µA,
T
A
= +25°C
±0.1°C
ppm/°C
ppm/kHR
Symbol
V
(BR)R
Parameter
Reverse Breakdown Voltage
LM285B-2.5/LM385B-2.5
T
A
= T
low
to T
high
(Note 1)
LM285-2.5V/LM385-2.5V
T
A
= T
low
to T
high
(Note 1)
Minimum Operating Current
T
A
= +25°C
T
A
= T
low
to T
high
(Note 1)
Reverse Breakdown Voltage
Change with Current
I
Rmin
= I
R
= 1.0mA, T
A
= +25°C
T
A
= T
low
to T
high
(Note 1)
1.0mA = I
R
= 20mA, T
A
= +25°C
T
A
= T
low
to T
high
(Note 1)
Reverse Dynamic Impedance
Average Temperature Coefficient
Long Term Stability
Test Conditions
I
R
= 20mA
LM285 / LM285B–2.5
Min
Typ Max
2.462
2.415
2.425
2.400
2.5
2.5
13
2.538
2.585
2.575
2.600
20
30
LM385 / LM385B–2.5
Min
Typ Max
2.462
2.436
2.425
2.400
2.5
2.5
13
2.538
2.564
2.575
2.600
Unit
V
I
RMIN
µA
20
30
mV
0.6
30
20
1.0
1.5
10
20
100
0.6
30
20
2.0
2.5
20
25
100
∆V
(BR)R
Z
∆V
(BR)
/∆T
S
I
R
= 100µA
20µA
I
R
20mA
I
R
= 100µA,
T
A
= +25°C
±0.1°C
ppm/°C
ppm/kHR
Note: 1. T
low
= – 40°C for LM285-1.2, LM285-2.5, LM285B-1.2, LM285B-2.5
0°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5
T
high
= +85°C for LM285-1.2, LM285-2.5, LM285B-1.2, LM285B-2.5
+70°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5
3-10
TELCOM SEMICONDUCTOR, INC.