PRELIMINARY INFORMATION
50mA CMOS LDO WITH SHUTDOWN
AND REFERENCE BYPASS
TC1014
ABSOLUTE MAXIMUM RATINGS*
Input Voltage .................................................................7V
Output Voltage .................................. (– 0.3) to (V
IN
+ 0.3)
Power Dissipation .................... Internally Limited (Note 7)
Operating Temperature .................... – 40°C < T
J
< 125°C
Storage Temperature ............................ – 65°C to +150°C
Maximum Voltage On Any Pin .......... V
IN
+ 0.3V to – 0.3V
*Stresses beyond those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond
those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
ELECTRICAL CHARACTERISTICS:
V
IN
= V
OUT
+ 1V, I
L
= 100µA, C
L
= 3.3µF, SHDN > V
IH
, T
A
= 25
°
C, unless otherwise noted.
Boldface
type specifications apply for junction temperatures of – 40°C to +125°C.
Symbol
V
IN
I
OUTMAX
V
OUT
TCV
OUT
∆V
OUT
/∆V
IN
∆V
OUT
/V
OUT
V
IN
– V
OUT
Parameter
Input Operating Voltage
Maximum Output Current
Output Voltage
V
OUT
Temperature Coefficient
Line Regulation
Load Regulation
Dropout Voltage (Note 4)
Test Conditions
Min
—
50
V
R
– 2.5%
Typ
—
—
V
R
±0.5%
20
40
0.01
0.5
5
65
95
—
50
—
64
200
0.04
260
Max
6.5
—
V
R
+ 2.5%
—
—
—
—
Units
V
mA
V
ppm/°C
%
%
mV
Note 1
Note 2
(V
R
+ 1V) < V
IN
< 6V
I
L
= 1.0mA to I
OUTMAX
(Note 3)
I
L
= 100µA
I
L
= 20mA
I
L
= 50mA
(Note 4)
I
L
= I
OUTMAX,
(Note 5)
SHDN = V
IH
, I
L
= 0
SHDN = 0V
F
RE
≤
1kHz
V
OUT
= 0V
Note 6
I
L
= I
OUTMAX
470pF from Bypass to GND
V
IN
= 2.5V to 6.5V
V
IN
= 2.5V to 6.5V
—
—
—
I
GND
I
IN
I
INSD
PSRR
I
OUTSC
∆V
OUT
/∆P
D
eN
Ground Pin Current
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
Output Noise
—
—
—
—
—
—
—
0
—
0.05
—
400
—
—
µA
µA
µA
dB
mA
%/W
nV/√Hz
SHDN Input
V
IH
V
IL
SHDN Input High Threshold
SHDN Input Low Threshold
45
—
—
—
—
15
%V
IN
%V
IN
NOTES:
1. V
R
is the regulator output voltage setting. V
R
= 2.5V, 2.7V, 3.0V, 3.3V, 5.0V.
2. TCV
OUT
= (V
OUTMAX
– V
OUTMIN
) x 10
6
V
OUT
x
∆T
3. Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load
range from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the
thermal regulation specification.
4. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
5. Ground pin current is the regulator pass transistor gate current. The total current drawn from the input supply is the sum of the load
current, ground current and supply current (i.e. I
IN
= I
SUPPLY
+ I
GND
+ I
LOAD
).
6. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for T = 10msec.
7. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e. T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see
Thermal Considerations
section of this data sheet for more details.
.
TC1014-01-6/5/97
2
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
