PRELIMINARY INFORMATION
100mA CMOS LDO WITH SHUTDOWN,
ERROR OUTPUT AND V
REF
BYPASS
TC1073
ABSOLUTE MAXIMUM RATINGS*
Input Voltage .................................................................7V
Output Voltage .................................. (– 0.3) to (V
IN
+ 0.3)
Power Dissipation .................... Internally Limited (Note 7)
Operating Temperature .................... – 40°C < T
J
< 125°C
Storage Temperature ............................ – 65°C to +150°C
Maximum Voltage On Any Pin .......... V
IN
+ 0.3V to – 0.3V
*Stresses beyond those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond
those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
ELECTRICAL CHARACTERISTICS:
V
IN
= V
OUT
+ 1V, I
L
= 0.1mA, C
L
= 3.3µF, SHDN > V
IH
, T
A
= 25
°
C, unless otherwise noted.
Symbol
V
IN
I
OUTMAX
V
OUT
TC V
OUT
∆V
OUT
/∆V
IN
∆V
OUT
/V
OUT
V
IN
– V
OUT
Parameter
Input Operating Voltage
Maximum Output Current
Output Voltage
V
OUT
Temperature Coefficient
Line Regulation
Load Regulation
Dropout Voltage (Note 4)
Test Conditions
Note 9
Note 9
Notes 1, 9
Note 2, 9
(V
R
+ 1V) < V
IN
< 6V
I
L
= 0.1mA to I
OUTMAX
(Note 3)
I
L
= 0.1mA
I
L
= 20mA
I
L
= 50mA
I
L
=100mA
(Note 4)
I
L
= I
OUTMAX,
(Note 5, 9)
SHDN = V
IH
, I
L
= 0
SHDN = 0V
SHDN < V
IL
F
RE
≤
1kHz
V
OUT
= 0V
Note 6
Min
—
100
V
R
– 2.5%
Typ
—
—
V
R
±0.5%
20
40
0.05
0.5
20
70
100
200
0
50
—
160 x V
R
64
300
0.04
160
10
260
Max
6.5
—
V
R
+ 2.5%
—
—
—
—
Units
V
mA
V
ppm/°C
%
%
mV
—
—
—
I
GND
I
IN
I
INSD
R
OUT
PSRR
I
OUTSC
∆V
OUT
/∆P
D
T
SD
∆T
SD
eN
Ground Pin Current
Supply Current
Shutdown Supply Current
Output Resistance during Shutdown
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
Thermal Shutdown Die Temperature
Thermal Shutdown Hysteresis
Output Noise
I
L
= I
OUTMAX
470pF from Bypass to GND
V
IN
= 2.5V to 6.5V
V
IN
= 2.5V to 6.5V
—
—
—
100 x V
R
—
—
—
—
—
—
—
80
0.05
—
—
500
—
—
—
—
µA
µA
µA
kΩ
dB
mA
%/W
°C
°C
nV/√Hz
SHDN Input
V
IH
V
IL
SHDN Input High Threshold
SHDN Input Low Threshold
45
—
—
—
—
15
%V
IN
%V
IN
TC1073-01 6/5/97
2
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
