6A HIGH-SPEED MOSFET DRIVERS
TC4420
TC4429
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage ............................................... – 5V to > V
DD
Input Current (V
IN
> V
DD
) .........................................50mA
Power Dissipation, T
A
≤
70°C
PDIP ...............................................................730mW
SOIC ...............................................................470mW
CerDIP ............................................................800mW
5-Pin TO-220 ......................................................1.6W
Package Power Dissipation (T
A
≤
70°C)
5-Pin TO-220 (With Heat Sink) .........................1.60W
Derating Factors (To Ambient)
PDIP ............................................................. 8mW/°C
SOIC ............................................................. 4mW/°C
CerDIP ....................................................... 6.4mW/°C
5-Pin TO-220 .............................................. 12mW/°C
Thermal Impedances (To Case)
5-Pin TO-220 R
θJ-C
........................................ 10°C/W
Storage Temperature Range ................ – 65°C to +150°C
Operating Temperature (Chip) .............................. +150°C
Operating Temperature Range (Ambient)
C Version ............................................... 0°C to +70°C
I Version ........................................... – 25°C to +85°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS:
T
A
= +25°C with 4.5V
≤
V
DD
≤
18V, unless otherwise specified.
Symbol
Input
V
IH
V
IL
V
IN
(Max)
I
IN
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Voltage Range
Input Current
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
Operating Input Voltage
2.4
—
–5
– 10
V
DD
– 0.025
—
—
—
—
1.5
1.8
1.3
—
—
—
—
2.1
1.5
6
—
—
0.8
V
DD
+0.3
10
—
0.025
2.8
2.5
—
—
V
V
V
µA
V
V
Ω
Ω
A
A
Parameter
Test Conditions
Min
Typ
Max
Unit
0V
≤
V
IN
≤
V
DD
See Figure 1
See Figure 1
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
DD
= 18V (See Figure 5)
Duty Cycle
≤
2%
t
≤
300
µs
Figure 1, C
L
= 2500 pF
Figure 1, C
L
= 2500 pF
Figure 1
Figure 1
V
IN
= 3V
V
IN
= 0V
Output
V
OH
V
OL
R
O
R
O
I
PK
I
REV
Switching Time
(Note 1)
t
R
t
F
t
D1
t
D2
—
—
—
—
—
—
4.5
25
25
55
55
0.45
55
—
35
35
75
75
1.5
150
18
nsec
nsec
nsec
nsec
mA
µA
V
Power Supply
I
S
V
DD
4-226
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
