3A DUAL HIGH-SPEED
MOSFET DRIVERS
TC4423
TC4424
TC4425
TC4423 Crossover Energy
10–8
8
6
MAX. POWER (mW)
1
Thermal Derating Curves
1400
8 Pin DIP
1200
16 Pin SOIC
1000
800
8 Pin CerDIP
600
400
200
2
3
4
2
A • sec
10–9
8
6
4
2
10–10
0
2
4
6
8
VIN
NOTE:
The values on this graph
represent the loss seen by both drivers in
a package during one complete cycle. For
a single driver, divide the stated values by
2. For a single transition of a single driver,
divide the stated value by 4.
10
12
14
16
18
0
0
20
40
60
80
100
120
140
AMBIENT TEMPERATURE (°C)
4
5
6
7
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings (See page 2) may
cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions above
those indicated in the operational sections of the specifications is not
implied. Exposure to Absolute Maximum Rating Conditions for extended
periods may affect device reliability.
8
TELCOM SEMICONDUCTOR, INC.
4-243
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
