1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426A
TC4427A
TC4428A
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B .. (V
DD
+ 0.3V) to (GND – 5.0V)
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP R
θJ-A
................................................ 150°C/W
CerDIP R
θJ-C
.................................................. 50°C/W
PDIP R
θJ-A
................................................... 125°C/W
PDIP R
θJ-C
..................................................... 42°C/W
SOIC R
θJ-A
................................................... 155°C/W
SOIC R
θJ-C
..................................................... 45°C/W
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Package Power Dissipation (T
A
≤
70°C)
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS:
Symbol
Input
V
IH
V
IL
I
IN
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
Over operating temperature range with 4.5V
≤
V
DD
≤
18V, unless
otherwise specified.
Min
Typ
2.4
—
–1
– 10
V
DD
– 0.025
—
—
—
—
—
0.5
Parameter
Test Conditions
Max
—
—
—
—
—
—
7
7
8
1.5
—
Unit
—
0.8
1
10
—
0.025
9
10
11
—
—
V
V
µA
– 0V
≤
V
IN
≤
V
DD
T
A
= 25°C
– 40°C
≤
T
A
≤
85°C
Output
V
OH
V
OL
R
O
High Output Voltage
Low Output Voltage
Output Resistance
DC Test
DC Test
V
DD
= 18V, I
O
= 10mA
V
V
Ω
T
A
= 25°C
0°C
≤
T
A
≤
70°C
– 40°
≤
T
A
≤
85°C
V
DD
= 18V
I
PK
I
REV
Peak Output Current
V
DD
= 18V
Latch-Up Protection
Duty Cycle
≤
2%
Withstand Reverse Current t
≤
300µsec
Rise Time
Figure 1
A
A
Switching Time
(Note 1)
t
R
T
A
= 25°C
0°C
≤
T
A
≤
70°C
– 40°C
≤
T
A
≤
85°C
T
A
= 25°C
0°C
≤
T
A
≤
70°C
– 40°C
≤
T
A
≤
85°C
T
A
= 25°C
0°C
≤
T
A
≤
70°C
– 40°C
≤
T
A
≤
85°C
T
A
= 25°C
0°C
≤
T
A
≤
70°C
– 40°C
≤
T
A
≤
85°C
V
DD
= 18V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
25
27
29
25
27
29
30
33
35
30
33
35
1.0
0.1
35
40
40
35
40
40
35
40
45
35
40
45
2.0
0.2
nsec
t
F
Fall Time
Figure 1
nsec
t
D1
Delay Time
Figure 1
nsec
t
D2
Delay Time
Figure 1
nsec
Power Supply
I
S
Power Supply Current
V
IN
= 3V (Both Inputs)
V
IN
= 0V (Both Inputs)
mA
NOTE:
1. Switching times are guaranteed by design.
4-252
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
