1.5A HIGH-SPEED 30V MOSFET DRIVERS
TC4431
TC4431
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ............................................................36V
Input Voltage (Note 1) ........................ V
DD
+ 0.3V to GND
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP R
θJ-A
................................................ 150°C/W
CerDIP R
θJ-C
.................................................. 50°C/W
PDIP R
θJ-A
................................................... 125°C/W
PDIP R
θJ-C
..................................................... 42°C/W
SOIC R
θJ-A
................................................... 250°C/W
SOIC R
θJ-C
..................................................... 75°C/W
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version ........................................... - 40°C to +85°C
Package Power Dissipation (T
A
≤
70°C )
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ............................................................... 470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS:
T
A
= +25°C with 5.0
≤
V
DD
≤
30V, unless otherwise specified.
Symbol
Input
V
IH
V
IL
I
IN
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current (Note 1)
High Output Voltage
Low Output Voltage
Output Resistance (V
OL
)
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
Start-up Threshold
Drop-out Threshold
2.4
—
–1
V
DD
– 1.0
—
—
—
—
0.3
—
—
—
—
0.8
1
V
V
µA
V
V
Ω
A
A
Parameter
Test Conditions
Min
Typ
Max
Unit
0V
≤
V
IN
≤
V
DD
(16V MAX)
I
OUT
= 100mA
V
DD
= 30V, I
O
= 10mA
Source: V
DD
= 30V
Sink: V
DD
= 30V
Duty Cycle
≤
2%
t
≤
300
µsec
Figure 1
Figure 1
Figure 1
Figure 1
V
IN
= 3V
V
IN
= 0V
(Note 3)
Output
V
OH
V
OL
R
O
I
PK
I
REV
V
DD
– 0.8
—
—
0.025
7
10
3.0
—
1.5
—
—
—
Switching Time
(Note 2)
t
R
t
F
t
D1
t
D2
—
—
—
—
—
—
—
7
25
33
62
78
2.5
0.3
8.4
7.7
40
50
80
90
4
0.4
10
—
nsec
nsec
nsec
nsec
mA
V
V
Power Supply
I
S
V
S
V
DO
4-258
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
