LOGIC-INPUT CMOS
QUAD DRIVERS
TC4467
TC4468
TC4469
Transition power dissipation arises in the
complementary configuration (TC446X) because the
output stage N-channel and P-channel MOS transistors
are ON simultaneously for a very short period when the
output changes. The transition power dissipation is
approximately:
P
T
= f V
S
(10
10
–9
).
Maximum operating temperature:
T
J
–
θ
JA
(P
D
) = 141°C,
where: T
J
= Maximum allowable junction temperature
(+150°C)
θ
JA
= Junction-to-ambient thermal resistance
(83.3°C/W) 14-pin plastic package.
NOTE:
Ambient operating temperature should not exceed +85°C for
"EJD" device or +125°C for "MJD" device.
1
2
3
4
Package power dissipation is the sum of load, quies-
cent and transition power dissipations. An example shows
the relative magnitude for each term:
C = 1000 pF capacitive load
V
S
= 15V
D = 50%
f = 200 kHz
P
D
= Package Power Dissipation = P
L
+ P
Q
+ P
T
= 45 mW + 35 mW + 30 mW = 110 mW.
VDD
1 µF FILM
14
1
2
3
4
5
6
8
9
7
0.1 µF CERAMIC
+5V
13
90%
1A
1B
2A
2B
3A
3B
4A
4B
VOUT
470 pF
INPUT
(A, B)
0V
VDD
5
90%
tF
12
10%
90%
t
R
10%
tD2
11
OUTPUT
10
0V
tD1
10%
Input: 100 kHz, square wave,
t
RISE
= t
FALL
≤
10nsec
Figure 1. Switching Time Test Circuit
6
7
8
TELCOM SEMICONDUCTOR, INC.
4-265
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
