POWER CMOS DRIVERS WITH VOLTAGE TRIPLER
TC4626
TC4627
ELECTRICAL CHARACTERISTICS:
T
A
= Over Operating Temperature Range V
DD
= 5V C1 = C2 = C3 10µF
unless otherwise specified.
Symbol
Driver Input
V
IH
V
IL
I
IN
Logic 1, Input Voltage
Logic 0, Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance, High
2.4
—
– 10
V
DRIVE
– 0.025
—
I
OUT
= 10 mA, V
DD
= 5V
C & E Version (T
A
= 70°C or 85°C)
M Version (T
A
= 125°C)
I
OUT
= 10 mA, V
DD
= 5V
C & E Version (T
A
= 70°C or 85°C)
M Version (T
A
= 125°C)
—
—
—
—
—
—
—
—
—
750
—
—
—
—
—
15
15
10
10
1.5
—
—
—
—
—
—
0.8
10
—
0.025
20
25
13
15
—
55
50
60
70
—
V
V
µA
V
V
Ω
1
Parameter
Test Conditions
Min
Typ
Max
Unit
2
3
4
5
6
7
0V
≤
V
IN
≤
V
BOOST
Driver Output
V
OH
V
OL
R
O
R
O
Output Resistance, Low
Ω
A
nsec
nsec
nsec
nsec
kHz
I
PK
t
R
t
F
t
D1
t
D2
F
MAX
Peak Output Current
Rise Time
Fall Time
Delay Time
Delay Time
Maximum Switching Frequency
Test Figure 1,2
Test Figure 1,2
Test Figure 1,2
Test Figure 1,2
Test Figure 1
V
DD
= 5V, V
BOOST
> 8.5V
I
L
= 10 mA, V
DD
= 5V
Switching Time
Voltage Booster
R
3
R
2
F
OSC
V
OSC
UV
@ V
BOOST
V
START
@ V
BOOST
V
BOOST
Voltage Boost Output
Source Resistance
Voltage Doubler Output
Source Resistance
Oscillator Frequency
Oscillator Amplitude
Measured at C1-
Undervoltage Threshold
Start Up Voltage
@V
DD
= 5V
Power Supply Current
Supply Voltage
No Load
V
IN
= LOW or HIGH
—
—
5
4.5
7.0
10.5
14.6
—
4.0
400
170
—
—
7.8
11.3
—
—
—
500
300
50
10
8.5
12
—
4
6.0
Ω
Ω
kHz
V
V
V
V
mA
V
R
LOAD
= 10kΩ
Power Supply
I
DD
V
DD
8
TELCOM SEMICONDUCTOR, INC.
4-273
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
