100mA CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER
TC660
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ........................................................... +6V
LV, FC, OSC Input
Voltage (Note 1) ....................... V
OUT
– 0.3V to (V
+
+0.3V)
Current Into LV (Note 1) ...................... 20
µA
for V
+
>3.5V
Output Short Duration (V
SUPPLY
≤
5.5V) (Note 3) .. 10 Sec
Power Dissipation (Note 2) (T
A
≤
70°C)
SOIC ............................................................... 470mW
Plastic DIP ......................................................730mW
Operating Temperature Range
C Suffix .................................................. 0°C to +70°C
E Suffix ............................................. – 40°C to +85°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS:
Specifications Measured Over Operating Temperature Range With,
V
+
= 5V, C
OSC
= Open, C1, C2 = 150µF, FC = Open, Test Circuit
(Figure 1), unless otherwise indicated.
Symbol
I
+
Parameter
Supply Current
Test Conditions
R
L
=
∞
FC pin = OPEN or GND
FC pin = V
+
LV = HIGH, R
L
= 1 kΩ
LV = GND, R
L
= 1 kΩ
LV = OUT, R
L
= 1 kΩ (Figure 9)
I
OUT
= 100mA
V
OUT
< – 4V
Pin 7 open; Pin 1 open or GND
Pin 1 = V
+
Pin 1 open
Pin 1 = V
+
R
L
= 1 kΩ connected between V
+
& V
OUT
R
L
= 500Ω connected between V
OUT
& GND
I
L
= 100mA to GND
R
L
=
∞
V
+
Min
—
—
3
1.5
2.5
—
100
—
—
—
—
96
92
—
99
Typ
200
1
—
—
—
6.5
—
10
90
+1.1
+5
98
96
88
99.9
Max
500
3
5.5
5.5
5.5
10
—
—
—
—
—
—
—
—
—
Unit
µA
mA
V
V
+
Supply Voltage Range
R
OUT
I
OUT
F
OSC
I
OSC
P
EFF
Output Source Resistance
Output Current
Oscillator Frequency
Input Current
Power Efficiency (Note 4)
Ω
mA
kHz
µA
%
V
OUT
E
FF
Voltage Conversion Efficiency
%
NOTES:
1. Connecting any input terminal to voltages greater than
or less than GND may cause destructive latch-up. It is recommended that no
inputs from sources operating from external supplies be applied prior to "power up" of the TC660.
2. Derate linearly above 50°C by 5.5 mW/°C.
3. To prevent damaging the device, do not short V
OUT
to V
+
.
4. To maximize output voltage and efficiency performance, use low ESR capacitors for C
1
and C
2
.
4-6
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
