BF996S
N-Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input and mixer stages in UHF tuner.
Features
D
Integrated gate protection diodes
D
Low noise figure
D
Low feedback capacitance
2
1
D
High cross modulation performance
D
Low input capacitance
D
High AGC-range
3
4
94 9279
BF996S Marking: MH
Plastic case (SOT 143)
1 = Source; 2 = Drain; 3 = Gate 2; 4 = Gate 1
Absolute Maximum Ratings
Parameters
Drain source voltage
Drain current
Gate 1/gate 2-source peak current
Total power dissipation
T
amb
≤
60°C
Channel temperature
Storage temperature range
Symbol
V
DS
I
D
±I
G1/G2SM
P
tot
T
Ch
T
stg
Value
20
30
10
200
150
–65 to +150
Unit
V
mA
mA
mW
°C
°C
Maximum Thermal Resistance
Parameters
Channel ambient on glass fibre printed board
(25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thChA
Value
450
Unit
K/W
TELEFUNKEN Semiconductors
Rev. A1, 17-Apr-96
1 (5)
TEMIC [ TEMIC SEMICONDUCTORS ]
