BPW14N
Silicon NPN Phototransistor
Description
BPW14N is a high speed silicon NPN epitaxial planar
phototransistor in a standard TO–18 hermetically sealed
metal case.
Its glass lens, featuring a viewing angle of
±12
°
makes it
insensible to ambient straylight. A base terminal is avail-
able to enable biasing and sensitivity control.
Features
D
D
D
D
D
D
D
D
D
Hermetically sealed case
Lens window
Narrow viewing angle
ϕ
=
±
10
°
Exact central chip alignment
Base terminal available
High photo sensitivity
Fast response times
Suitable for visible and near infrared radiation
Selected into sensitivity groups
94 8486
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Thermal Resistance Junction/Case
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
T
sd
R
thJA
R
thJC
Value
32
32
5
50
100
310
150
–55...+150
260
400
150
Unit
V
V
V
mA
mA
mW
°
C
°
C
°
C
K/W
K/W
t
p
/T = 0.5, t
p
10 ms
T
amb
25
°
C
x
x
t
x
5s
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
1 (6)
TEMIC [ TEMIC SEMICONDUCTORS ]
