BUD600
Silicon NPN High Voltage Switching Transistor
Features
D
D
D
D
D
Simple-sWitch-Off Transistor
(SWOT)
HIGH SPEED technology
Planar passivation
100 kHz switching rate
Very low switching losses
D
D
D
D
Very low dynamic saturation
Very low operating temperature
Optimized RBSOA
High reverse voltage
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
2
94 8965
1
1
94 8964
3
2
3
BUD600
1 Base 2 Collector 3 Emitter
BUD600 –SMD
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings
T
case
= 25°C, unless otherwise specified
Parameter
Collector-emitter voltage
g
Test Conditions
Symbol
V
CEO
V
CEW
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Value
250
300
600
11
2
3
0.75
1
12
150
–65 to +150
Unit
V
V
V
V
A
A
A
A
W
°
C
°
C
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
T
case
≤
60
°
C
TELEFUNKEN Semiconductors
Rev. B2, 18-Jul-97
1 (9)
TEMIC [ TEMIC SEMICONDUCTORS ]
