TELEFUNKEN Semiconductors
CNY74-2/CNY74-4
Electrical Characteristics
for single coupled system, T
amb
= 25°C
Input (Emitter)
Parameters
Forward voltage
Breakdown voltage
Test Conditions
I
F
= 50 mA
I
R
= 100
mA
Symbol
V
F
V
(BR)
Min.
5
Typ.
1.25
Max.
1.6
Unit
V
V
Output (Detector)
Parameters
Collector emitter break-
down voltage
Emitter collector break-
down voltage
Collector dark current
Test Conditions
I
C
= 1 mA
I
E
= 100
mA
V
CE
= 20 V,
I
F
= 0, E = 0
Symbol
V
(BR)CEO
V
(BR)ECO
I
CEO
Min.
70
7
100
Typ.
Max.
Unit
V
V
nA
Coupler
Parameters
DC Isolation test voltage
Isolation resistance
Collector current
I
C
/I
F
Collector emitter saturation
voltage
Cut-off frequency
Coupling capacitances
1)
Test Conditions
t=2s
V
IO
= 1000 V,
40% relative humidity
I
F
= 5 mA, V
CE
= 5 V
I
F
= 10 mA, V
CE
= 5 V
I
F
= 10 mA, V
CE
= 5 V
I
F
= 10 mA, I
C
= 1 mA
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100
W
f = 1 MHz
Symbol
V
IO 1)
R
IO 1)
I
C
I
C
CTR
V
CEsat
f
c
C
k
Min.
2.5
10
10
2.5
6
0.5
Typ.
10
12
5
12
1
Max.
Unit
kV
W
mA
mA
V
kHz
pF
30
6
0.3
100
0.3
related to standard climate 23/50 DIN 50 014
Rev. A1: 19.09.1995
3 (6)
TEMIC [ TEMIC SEMICONDUCTORS ]
