DG183/184/185
Typical Characteristics (Cont’d)
100
I
D(off)
vs. Temperature (DG184/185)
V+ = 10 V, V– = –20 V
V
D
= –10 V, V
S
= 10 V
30
Capacitance vs. V
D
or V
S
(DG183)
f = 1 MHz
26
10
C
S, D
(pF)
I
D
(nA)
22
C
S(off)
C
D(on)
B Suffix
1
A Suffix
18
14
C
D(off)
0.1
25
45
65
85
Temperature (_C)
105
125
10
–8
–4
0
4
8
V
D
or V
S
– Drain or Source Voltage (V)
20
18
16
14
C
S, D
(pF)
Capacitance vs. V
D
or V
S
(DG184/185)
V
INL
= 0.8 V
V
INH
= 2 V
f = 1 MHz
Off Isolation vs. Frequency
100
90
C
D(on)
80
70
ISO (dB)
60
50
40
30
20
V+ = 15 V, V– = –15 V
V
R
= 0, V
L
= 5 V
R
L
= 75
W
V
IN
w
220 mV
RMS
10
5
10
6
DG183
DG184/185
12
10
8
6
4
2
0
–10
Capacitance is measured from test terminal
to common.
–8
–6
–4
–2
0
2
4
6
8
10
C
S(off)
C
D(off)
10
0
10
7
10
8
V
D
or V
S
– Drain or Source Voltage (V)
f – Frequency (Hz)
Siliconix
S-52895—Rev. D, 16-Jun-97
7
TEMIC [ TEMIC SEMICONDUCTORS ]
