DG201HS
Test Circuits
+15 V
V+
3 V
0 V
Logic
Input
t <20 ns
t <20 ns
f
r
50%
S
D
"10 V
V
O
t
IN
OFF1
Switch
Input
V
S
R
1 kW
C
L
35 pF
L
3 V
GND
V–
90%
10%
Switch
Output
V
O
t
t
–15 V
(includes fixture and stray capacitance)
ON
OFF2
C
L
R
L
V
= V
S
O
R
L
+ r
DS(on)
Figure 2. Switching Time
+15 V
V+
DV
R
g
O
S
D
V
O
V
O
IN
GND
C
1 nF
L
3 V
IN
X
V–
SW
OFF
ON
–15 V
Q = DV x C
O
L
Figure 3. Charge Injection
+15 V
V+
C
+15 V
C
S
1
D
V
1
2
S
R = 50 W
V+
g
50 W
V
IN
O
1
2
S
D
V
S
0V, 2.4 V
NC
0V, 2.4 V
R = 50 W
g
S
2
D
R
L
V
O
IN
0V, 2.4 V
R
L
IN
GND
V–
C
V
GND
V–
C
–15 V
–15 V
V
V
S
S
X
Isolation = 20 log
Off Isolation = 20 log
TALK
V
O
O
C = RF bypass
Figure 4. Off Isolation
Figure 5. Crosstalk
Siliconix
E-77071—Rev. E, 01-Sep-97
7
TEMIC [ TEMIC SEMICONDUCTORS ]
