DG201HS
Typical Characteristics
70
r
DS(on)
– Drain-Source On-Resistance (
W
)
60
50
40
"10
V
30
20
"20
V
10
0
–20 –16 –12 –8
–4
0
4
8
12
16
20
V
D
– Drain Voltage (V)
180
r
DS(on)
– Drain-Source On-Resistance (
W
)
160
140
120
100
80
10 V
60
40
20
0
0
2
4
6
8
10
12
14
16
V
D
– Drain Voltage (V)
10 pA
–60 –40 –20
0
20
40
60
80 100 120 140
12 V
15 V
7V
Leakage
1 nA
I
D(on)
100 pA
I
S(off),
I
D(off)
"15
V
r
DS(on)
vs. V
D
and Power Supply Voltages
r
DS(on)
– Drain-Source On-Resistance (
W
)
50
r
DS(on)
vs. V
D
and Temperature
V+ = 15 V
V– = –15 V
40
125_C
30
85_C
25_C
20
0_C
–55_C
10
"5
V
0
–15
–10
–5
0
5
10
15
V
D
– Drain Voltage (V)
10 nA
r
DS(on)
vs. V
D
and Single Power Supply Voltages
V+ = 5 V
Leakage Currents vs. Temperature
Temperature (_C)
Input Switching Threshold vs. Supply Voltage
2.5
55
Switching Time vs. Power Supply Voltage
2
Switching Time (ns)
50
V
IN
( V )
1.5
45
t
ON
1
40
0.5
35
t
OFF
0
"4
30
"6
"8
"10 "12 "14 "16 "18 "20
"4
"6
"8
"10 "12 "14 "16 "18 "20
Supply Voltage (V)
Positive/Negative Supplies (V)
Siliconix
E-77071—Rev. E, 01-Sep-97
5
TEMIC [ TEMIC SEMICONDUCTORS ]
