ND2012L/2020L
N-Channel Depletion-Mode MOSFET Transistors
Product Summary
Part Number
ND2012L
ND2020L
V
(BR)DSV
Min (V)
200
r
DS(on)
Max (W)
12
20
V
GS(off)
(V)
–1.5 to –4
–0.5 to –2.5
I
D
(A)
0.16
0.132
Features
D
D
D
D
D
High Breakdown Voltage: 220 V
Normally “On” Low r
DS
Switch: 9
W
Low Input and Output Leakage
Low-Power Drive Requirement
Low Input Capacitance
Benefits
D
D
D
D
D
Full-Voltage Operation
Low Offset Voltage
Low Error Voltage
Easily Driven Without Buffer
High-Speed Switching
Applications
D
D
D
D
D
Normally “On” Switching Circuits
Current Sources/Limiters
Power Supply, Converter Circuits
Solid-State Relays
Telecom Switches
TO-226AA
(TO-92)
S
1
G
2
D
3
Top View
Absolute Maximum Ratings (T
A
= 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
Pulsed Drain Current
a
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70197.
Applications information may also be obtained via FaxBack, request document #70612.
T
A
= 25_C
T
A
= 100_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
ND2012L
200
"30
0.16
0.1
0.8
0.8
0.32
156
ND2020L
200
"30
0.132
0.083
0.8
0.8
0.32
156
Unit
V
A
W
_C/W
_C
–55 to 150
Siliconix
S-52426—Rev. C, 14-Apr-97
1
TEMIC [ TEMIC SEMICONDUCTORS ]
