Si9945DY
Dual N-Channel Enhancement-Mode MOSFET
Product Summary
V
DS
(V)
60
r
DS(on)
(W)
0.10
@ V
GS
=
10
V
0.20
@ V
GS
=
4.5
V
I
D
(A)
"3.3
"2.5
D
1
D
1
D
2
D
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
Absolute Maximum Ratings (
T
A
= 25_C Unless Otherwise Noted
)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
I
D
I
DM
I
S
P
D
T
J
, T
stg
Symbol
V
DS
V
GS
Limit
60
"20
"3.3
"2.6
10
1.7
2.0
1.3
–55 to 150
Unit
V
A
W
_C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70133.
A SPICE Model data sheet is available for this product (FaxBack document #70516).
Symbol
R
thJA
Limit
62.5
Unit
_C/W
Siliconix
S-47958—Rev. G, 15-Apr-96
1
TEMIC [ TEMIC SEMICONDUCTORS ]
