SUP/SUB75N06-08
Typical Characteristics (25_C Unless Otherwise Noted)
2.5
On-Resistance vs. Junction Temperature
100
V
GS
= 10 V
I
D
= 30 A
I
S
– Source Current (A)
Source-Drain Diode Forward Voltage
r
DS(on)
– On-Resistance (
W
)
(Normalized)
2.0
T
J
= 150_C
T
J
= 25_C
10
1.5
1.0
0.5
0
–50 –25
1
0
25
50
75
100 125 150 175
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
Thermal Ratings
100
Maximum Avalanche and Drain Current
vs. Case Temperature
500
Safe Operating Area
80
I
D
– Drain Current (A)
I
D
– Drain Current (A)
100
Limited
by r
DS(on)
10 ms
60
100 ms
40
1 ms
10
T
C
= 25_C
Single Pulse
1
20
10 ms
100 ms
dc
100
0
0
25
50
75
100
125
150
175
T
C
– Case Temperature (_C)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–5
10
–4
10
–3
10
–2
0.1
1
10
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
10
–1
1
3
Square Wave Pulse Duration (sec)
4
Siliconix
S-47969—Rev. D, 08-Jul-96
TEMIC [ TEMIC SEMICONDUCTORS ]
