SUP/SUB65P06-20
P-Channel Enhancement-Mode Transistors
Product Summary
V
(BR)DSS
(V)
–60
TO 220AB
TO 263
G
DRAIN connected to TAB
G D S
Top View
SUB65P06 20
D
P Channel MOSFET
r
DS(on)
(W)
0.020
I
D
(A)
–65
a
S
GD S
Top View
SUP65P06 20
Absolute Maximum Ratings (T
C
= 25_C Unless Otherwise Noted)
Parameter
Gate-Source Voltage
Continuous Drain Current
(T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Power Dissipation
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 125_C (TO-263)
c
T
C
= 25_C
T
C
= 125_C
Symbol
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
"20
–65
a
–39
–200
–60
180
187
d
3.7
–55 to 175
Unit
V
A
mJ
W
_C
Operating Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
PCB Mount (TO-263)
c
Junction-to-Ambient
Junction to Ambient
Free Air (TO-220AB)
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle
v
1%.
c. When mounted on 1” square PCB (FR-4 material).
d. See SOA curve for voltage derating.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70289.
A SPICE Model data sheet is available for this product (FaxBack document #70543).
R
thJA
R
thJC
62.5
0.8
Symbol
R
thJA
Limit
40
Unit
_C/W
Siliconix
P-39628—Rev. A, 28-Dec-94
1
TEMIC [ TEMIC SEMICONDUCTORS ]
